Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack

• 作者S.V. Jagadeesh Chandra; Jin-Sung Kim; Kyung-Won Moon; Chel-Jong Choi
• 卷第89卷
• 印刷ISSN0167-9317
• 文件大小541.34KB
• 发表时间2012
• DOI10.1016/j.mee.2011.03.156
• 页码76-79