Characterization of silicon ion-implanted GaN and AlGaN
Kazuki Nomoto; Yuki Toyoda; Masataka Satoh; Taroh Inada; Tohru Nakamura
- 作者Kazuki Nomoto; Yuki Toyoda; Masataka Satoh; Taroh Inada; Tohru Nakamura
- 卷第272卷
- 印刷ISSN0168-583X
- 文件大小518.60KB
- 发表时间2012
- DOI10.1016/j.nimb.2011.01.047
- 页码125-127