A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs
- 期刊名称IEEE Transactions on Electron Devices
- 作者Bellone, Salvatore; Di Benedetto, Luigi; Licciardo, Gian Domenico
- 卷第59卷
- 期第9期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小613.07KB
- 发表时间2012-09
- DOI10.1109/ted.2012.2203601
- 页码2546-2549
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