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Optimization of Drain Current and Voltage Characteristics for DP4T Double-Gate RF CMOS Switch at 45-nm Technology

Optimization of Drain Current and Voltage Characteristics for DP4T Double-Gate RF CMOS Switch at 45-nm Technology

Viranjay M. srivastava; K.S. Yadav; G. Singh

作者Viranjay M. srivastava; K.S. Yadav; G. Singh
卷第38卷
文件大小2763.67KB
发表时间2012
DOI10.1016/j.proeng.2012.06.060

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