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Drain Current and Noise Model of Cylindrical Surrounding Double-Gate MOSFET for RF Switch

Drain Current and Noise Model of Cylindrical Surrounding Double-Gate MOSFET for RF Switch

Viranjay M. srivastava; K.S. Yadav; G. Singh
  • 作者Viranjay M. srivastava; K.S. Yadav; G. Singh
  • 卷第38卷
  • 文件大小2464.09KB
  • 发表时间2012
  • DOI10.1016/j.proeng.2012.06.064
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