Work Function Engineering With Linearly Graded Binary Metal Alloy Gate Electrode for Short-Channel SOI MOSFET

• 期刊名称IEEE Transactions on Nanotechnology
• 作者Deb, Sanjoy; Singh, N. Basanta; Islam, Nurul; Sarkar, Subir Kumar
• 卷第11卷
• 期第3期
• 印刷ISSN1536-125X
• 电子ISSN1941-0085
• 文件大小426.65KB
• 发表时间2012-05
• DOI10.1109/TNANO.2011.2177669
• 页码472-478