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[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Impact of hot electrons on the reliability of AlGaN/GaN High Electron Mobility Transistors

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Impact of hot electrons on the reliability of AlGaN/GaN High Electron Mobility Transistors

Meneghini, Matteo; Stocco, Antonio; Silvestri, Riccardo; Ronchi, Nicolo; Meneghesso, Gaudenzio; Zanoni, Enrico
  • 作者Meneghini, Matteo; Stocco, Antonio; Silvestri, Riccardo; Ronchi, Nicolo; Meneghesso, Gaudenzio; Zanoni, Enrico
  • 文件大小462.48KB
  • 发表时间2012
  • DOI10.1109/IRPS.2012.6241779
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