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[IEEE 2012 28th International Conference on Microelectronics (MIEL 2012) - Nis, Serbia (2012.05.13-2012.05.16)] 2012 28th International Conference on Microelectronics Proceedings - Simulation of current collapse in the 0.25 µm gate Length Al<inf>0.28</inf>Ga<inf>0.72</inf>N/GaN HEMT

[IEEE 2012 28th International Conference on Microelectronics (MIEL 2012) - Nis, Serbia (2012.05.13-2012.05.16)] 2012 28th International Conference on Microelectronics Proceedings - Simulation of current collapse in the 0.25 µm gate Length Al0.28Ga0.72N/GaN HEMT

Faramehr, S.; Kalna, K.; Igic, P.

作者Faramehr, S.; Kalna, K.; Igic, P.
文件大小230.13KB
发表时间2012
DOI10.1109/MIEL.2012.6222842
页码233-236

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