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[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Luminescence properties of Ge-implanted SiO<inf>2</inf> layer on Si substrate for blue-UV light source with low-voltage drive

[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Luminescence properties of Ge-implanted SiO2 layer on Si substrate for blue-UV light source with low-voltage drive

Arai, Nobutoshi; Harada, Masatomi; Kotaki, Hiroshi; Takahashi, Akira; Miyagawa, Go; Kinoshita, Shohei; Tsuji, Hiroshi; Gotoh, Yasuhito
  • 作者Arai, Nobutoshi; Harada, Masatomi; Kotaki, Hiroshi; Takahashi, Akira; Miyagawa, Go; Kinoshita, Shohei; Tsuji, Hiroshi; Gotoh, Yasuhito
  • 文件大小235.34KB
  • 发表时间2012
  • DOI10.1109/imfedk.2012.6218571
  • 页码1-2
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