[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Simple Fabrication of Suspended Germanium Structures and Their Electrical Properties from High Quality Ge on Si(001) Layers
- 作者Shah, Vishal A.; Myronov, Maksym; Wongwanitwatana, Chalermwat; Morris, Richard J. H.; Prest, Martin J.; Richardson-Bullock, James; Parker, Evan H. C.; Whall, Terry E.; Leadley, David R.
- 文件大小395.79KB
- 发表时间2012
- DOI10.1109/istdm.2012.6222500
- 页码1-2
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