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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD

[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD

Dobbie, Andy; Myronov, Maksym; Morris, Richard J. H.; Prest, Martin J.; Richardson-Bullock, James S.; Hassan, Amna H. A. H.; Shah, Vishal A.; Parker, Evan H. C.; Whall, Terry E.; Leadley, David R.
  • 作者Dobbie, Andy; Myronov, Maksym; Morris, Richard J. H.; Prest, Martin J.; Richardson-Bullock, James S.; Hassan, Amna H. A. H.; Shah, Vishal A.; Parker, Evan H. C.; Whall, Terry E.; Leadley, David R.
  • 文件大小203.59KB
  • 发表时间2012
  • DOI10.1109/istdm.2012.6222451
  • 页码1-2
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