[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Extremely Sharp Phosphorus Turn-Off Slope and Effect of Hydrogen on Phosphorus Surface Segregation in Epitaxially-Grown Relaxed Si0.7Ge0.3 by RTCVD

• 作者Li, Jiun-Yun; Huang, Chiao-Ti; Sturm, James C.
• 文件大小287.13KB
• 发表时间2012
• DOI10.1109/istdm.2012.6222436
• 页码1-2