[IEEE 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD) - Grenoble, France (2012.09.24-2012.09.26)] 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs

Theodorou, C. G.; Ioannidis, E. G.; Haendler, S.; Planes, N.; Arnaud, F.; Andrieu, F.; Poiroux, T.; Faynot, O.; Jomaah, J.; Dimitriadis, C. A.; Ghibaudo, G.

作者Theodorou, C. G.; Ioannidis, E. G.; Haendler, S.; Planes, N.; Arnaud, F.; Andrieu, F.; Poiroux, T.; Faynot, O.; Jomaah, J.; Dimitriadis, C. A.; Ghibaudo, G.
文件大小939.00KB
发表时间2012
DOI10.1109/iscdg.2012.6360011
页码223-226

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