Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Shah, Vishal Ajit; Myronov, Maksym; Wongwanitwatana, Chalermwat; Bawden, Lewis; Prest, Martin J; Richardson-Bullock, James S; Rhead, Stephen; Parker, Evan H C; Whall, Terrance E; Leadley, David R

期刊名称Science and Technology of Advanced Materials
作者Shah, Vishal Ajit; Myronov, Maksym; Wongwanitwatana, Chalermwat; Bawden, Lewis; Prest, Martin J; Richardson-Bullock, James S; Rhead, Stephen; Parker, Evan H C; Whall, Terrance E; Leadley, David R
卷第13卷
期第5期
印刷ISSN1468-6996
电子ISSN1878-5514
文件大小506.86KB
发表时间2012-10-01
DOI10.1088/1468-6996/13/5/055002

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Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures