SPIE Proceedings [SPIE 16th International Workshop on Physics of Semiconductor Devices - Kanpur, India (Monday 19 December 2011)] 16th International Workshop on Physics of Semiconductor Devices - Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors
- 作者Das, Anindita; Chattopadhyay, Sanatan; Dalapati, Goutam K.; Chi, Dongzhi; Kumar, M. K.; Katiyar, Monica; Mazhari, B.; Mohapatra, Y N.
- 卷第8549卷
- 印刷ISSN0277-786X
- 文件大小310.39KB
- 发表时间2012
- DOI10.1117/12.924341
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