High Quality 3C-SiC Substrate for MOSFET Fabrication
- 期刊名称Materials Science Forum
- 作者Nagasawa, Hiroyuki; Kawahara, Takamitsu; Yagi, Kuniaki; Hatta, Naoki; Uchida, Hidetsugu; Kobayashi, Motoki; Reshanov, Sergey A.; Esteve, Romain; Schöner, Adolf
- 卷第711卷
- 电子ISSN1662-9752
- 文件大小977.38KB
- 发表时间2012-1
- DOI10.4028/www.scientific.net/MSF.711.91
- 页码91-98
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