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SPIE Proceedings [SPIE 16th International Workshop on Physics of Semiconductor Devices - Kanpur, India (Monday 19 December 2011)] 16th International Workshop on Physics of Semiconductor Devices - A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT

SPIE Proceedings [SPIE 16th International Workshop on Physics of Semiconductor Devices - Kanpur, India (Monday 19 December 2011)] 16th International Workshop on Physics of Semiconductor Devices - A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT

Bhattacharya, Monika; Jogi, Jyotika; Gupta, R. S.; Gupta, Mridula; Katiyar, Monica; Mazhari, B.; Mohapatra, Y N.
  • 作者Bhattacharya, Monika; Jogi, Jyotika; Gupta, R. S.; Gupta, Mridula; Katiyar, Monica; Mazhari, B.; Mohapatra, Y N.
  • 卷第8549卷
  • 印刷ISSN0277-786X
  • 文件大小538.42KB
  • 发表时间2012
  • DOI10.1117/12.925320
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