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On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate

On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate

Xia, Ling; Hanson, Allen; Boles, Timothy; Jin, Donghyun
  • 期刊名称Applied Physics Letters
  • 作者Xia, Ling; Hanson, Allen; Boles, Timothy; Jin, Donghyun
  • 卷第102卷
  • 期第11期
  • 印刷ISSN0003-6951
  • 文件大小964.28KB
  • 发表时间2013
  • DOI10.1063/1.4798257
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