On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate
Xia, Ling; Hanson, Allen; Boles, Timothy; Jin, Donghyun
- 期刊名称Applied Physics Letters
- 作者Xia, Ling; Hanson, Allen; Boles, Timothy; Jin, Donghyun
- 卷第102卷
- 期第11期
- 印刷ISSN0003-6951
- 文件大小964.28KB
- 发表时间2013
- DOI10.1063/1.4798257