New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation

• 期刊名称Journal of Applied Physics
• 作者Xu, Min; Gu, Jiangjiang J.; Wang, Chen; Zhernokletov, D. M.; Wallace, R. M.; Ye, Peide D.
• 卷第113卷
• 期第1期
• 印刷ISSN0021-8979
• 文件大小1824.29KB
• 发表时间2013
• DOI10.1063/1.4772944