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Quantum Size and Doping Concentration Effects on the Current-Voltage Characteristics in GaN Resonant Tunneling Diodes

Quantum Size and Doping Concentration Effects on the Current-Voltage Characteristics in GaN Resonant Tunneling Diodes

Dakhlaoui, Hassen
  • 期刊名称Chinese Physics Letters
  • 作者Dakhlaoui, Hassen
  • 卷第30卷
  • 期第7期
  • 印刷ISSN0256-307X
  • 电子ISSN1741-3540
  • 文件大小519.83KB
  • 发表时间2013-07
  • DOI10.1088/0256-307X/30/7/077304
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