A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shaped buried oxide feature
- 期刊名称Materials Science in Semiconductor Processing
- 作者Mehrad, Mahsa; Orouji, Ali A.
- 卷第16卷
- 期第6期
- 印刷ISSN1369-8001
- 文件大小723.21KB
- 发表时间2013-12
- DOI10.1016/j.mssp.2013.07.012
- 页码1977-1981
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[IEEE Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005. - Austin, TX, USA (2005.03.6-2005.03.10)] Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005. - APEC Twentieth Annual IEEE Applied Power Electronics Conference and Exposition2005
[IEEE Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005. - Austin, TX, USA (2005.03.6-2005.03.10)] Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005. - APEC Twentieth Annual IEEE Applied Power Electronics Conference and Exposition2005
[IEEE Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005. - Austin, TX, USA (2005.03.6-2005.03.10)] Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005. - APEC Twentieth Annuak IEEE Applied Power Electronics Conference and Exposition2005
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