[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Data retention time of a new composed cell for dynamic random access memory
Riho, Yoshiro; Nakazato, Kazuo
- 作者Riho, Yoshiro; Nakazato, Kazuo
- 文件大小1352.41KB
- 发表时间2013
- DOI10.1109/EDSSC.2013.6628104
- 页码1-2