[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Analysis of satellite defects formed in photolithograph process by TOF-SIMS and XPS

Lei Zhu, ; Teo, H. W.; Hua, Y. N.; Loh, H.L.; Leong, C.C.; Kam, C.H.; Zhao, S.P.; Redkar, S.; Gui, D.; Sheng, Y.Q.; Xing, Z.X

作者Lei Zhu, ; Teo, H. W.; Hua, Y. N.; Loh, H.L.; Leong, C.C.; Kam, C.H.; Zhao, S.P.; Redkar, S.; Gui, D.; Sheng, Y.Q.; Xing, Z.X
文件大小156.97KB
发表时间2013
DOI10.1109/ipfa.2013.6599170
页码293-295

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