-doped layers in silicon
- 期刊名称Physical Review B
- 作者Carter, D. J.; Warschkow, O.; Marks, N. A.; McKenzie, D. R.
- 卷第87卷
- 期第4期
- 印刷ISSN1098-0121
- 电子ISSN1550-235X
- 文件大小922.60KB
- 发表时间2013-1-11
- DOI10.1103/PhysRevB.87.045204
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