[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - Temperature dependence of resistance of conductive filament formed in NiO layer in resistive switching memory
Hamada, Yoshihumi; Kato, Takashi; Otsuka, Shintaro; Shimizu, Tomohiro; Shingubara, Shoso
- 作者Hamada, Yoshihumi; Kato, Takashi; Otsuka, Shintaro; Shimizu, Tomohiro; Shingubara, Shoso
- 文件大小164.83KB
- 发表时间2013
- DOI10.1109/imfedk.2013.6602253
- 页码86-87