[IEEE 2013 IEEE 10th International Conference on ASIC (ASICON 2013) - Shenzhen, China (2013.10.28-2013.10.31)] 2013 IEEE 10th International Conference on ASIC - Conduction mechanism of self-rectifying n+Si-HfO2-Ni RRAM
Lu, D.Y.; Tran, X.A.; Yu, H.Y.; Huang, D.M.; Lin, Y.Y.; Ding, S.J.; Wang, P.F.; Ming-Fu Li,
- 作者Lu, D.Y.; Tran, X.A.; Yu, H.Y.; Huang, D.M.; Lin, Y.Y.; Ding, S.J.; Wang, P.F.; Ming-Fu Li,
- 文件大小423.08KB
- 发表时间2013
- DOI10.1109/asicon.2013.6811967
- 页码1-4