MOCVD Regrowth of InP on Hybrid Silicon Substrate
- 期刊名称ECS Solid State Letters
- 作者Zhang, C.; Liang, D.; Bowers, J. E.
- 卷第2卷
- 期第11期
- 印刷ISSN2162-8742
- 电子ISSN2162-8750
- 文件大小1179.28KB
- 发表时间2013-08-30
- DOI10.1149/2.008311ssl
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