Electrical Bistabilities of Write-Once-Read-Many-Times Memory Devices Fabricated Utilizing Indium Tin Oxide Nanoparticles Embedded in a Poly 4-Vinyl Phenol Layer
- 期刊名称Nanoscience and Nanotechnology Letters
- 作者Xu, Jia; Zhang, Yong; Li, Xiaochan; Zhang, Tao; He, Miao; Qian, Weining; Li, Yun; Wen, Xiaoxia; Chen, Fangsheng; Ding, Lizhen; Wang, Bo
- 卷第5卷
- 期第2期
- 印刷ISSN1941-4900
- 电子ISSN1941-4919
- 文件大小4183.88KB
- 发表时间2013-02-01
- DOI10.1166/nnl.2013.1510
- 页码147-150
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