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AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.

作者Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.
印刷ISSN0094-243X
文件大小405.94KB
发表时间2013
DOI10.1063/1.4848294
页码79-80

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