![[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - A novel integration of STT-MRAM for on-chip hybrid memory by utilizing non-volatility modulation]()
[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - A novel integration of STT-MRAM for on-chip hybrid memory by utilizing non-volatility modulationPark, J.-H.; Kwon, S.; Bae, B.-J.; Kim, I.; Ji, N.; Lee, K.; Shin, H.; Han, S. H.; Hwang, S.; Jeong, D.; Lee, J.; Lee, J.; Oh, S. C.; Park, S. O.; Song, Y. J.; Jeong, G. T.; Koh, G. H.; Hyun, S.; Hwang, K.; Nam, S. W.; Kang, H. K.; Jung, E. S.; Jeong, J.; Pi, U.; Kim, W.K.; Lee, S.; Noh, E.; Kim, K.; Lim, W. C. · 2019