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Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong
  • 期刊名称Materials Research Bulletin
  • 作者Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong
  • 卷第50卷
  • 印刷ISSN0025-5408
  • 文件大小1147.43KB
  • 发表时间2014-02
  • DOI10.1016/j.materresbull.2013.11.005
  • 页码409-412
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