Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS
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Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS ₂

Kim, In Soo; Sangwan, Vinod K.; Jariwala, Deep; Wood, Joshua D.; Park, Spencer; Chen, Kan-Sheng; Shi, Fengyuan; Ruiz-Zepeda, Francisco; Ponce, Arturo; Jose-Yacaman, Miguel; Dravid, Vinayak P.; Marks, Tobin J.; Hersam, Mark C.; Lauhon, Lincoln J.

期刊名称ACS Nano
作者Kim, In Soo; Sangwan, Vinod K.; Jariwala, Deep; Wood, Joshua D.; Park, Spencer; Chen, Kan-Sheng; Shi, Fengyuan; Ruiz-Zepeda, Francisco; Ponce, Arturo; Jose-Yacaman, Miguel; Dravid, Vinayak P.; Marks, Tobin J.; Hersam, Mark C.; Lauhon, Lincoln J.
卷第8卷
期第10期
印刷ISSN1936-0851
电子ISSN1936-086X
文件大小5103.77KB
发表时间2014-10-28
DOI10.1021/nn503988x
页码10551-10558

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Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS 2

Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS ₂