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[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Stochastic failure model for endurance degradation in vacancy modulated HfO<inf>x</inf> RRAM using the percolation cell framework

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Stochastic failure model for endurance degradation in vacancy modulated HfOx RRAM using the percolation cell framework

Raghavan, Nagarajan; Pey, Kin Leong; Frey, Daniel D.; Bosman, Michel

作者Raghavan, Nagarajan; Pey, Kin Leong; Frey, Daniel D.; Bosman, Michel
文件大小390.13KB
发表时间2014
DOI10.1109/irps.2014.6861163

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