High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm
- 期刊名称Inorganic Materials
- 作者M. G. Vasil’ev,A. M. Vasil’ev,A. D. Izotov,A. A. Shelyakin
- 卷第50卷
- 期第9期
- 印刷ISSN0020-1685
- 电子ISSN1608-3172
- 文件大小1051.79KB
- 发表时间2014-09
- DOI10.1134/S0020168514090167
- 页码888-891
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