![Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy]()
Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopyBertram, F.; Riemann, T.; Christen, J.; Kaschner, A.; Hoffmann, A.; Thomsen, C.; Hiramatsu, K.; Shibata, T.; Sawaki, N. · Applied Physics Letters · 1999