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Formation of a Nanoscale SiO
<sub/>2</sub>
Capping Layer on Photoresist Lines with an Ar/SiCl
<sub/>4</sub>
/O
<sub/>2</sub>
Inductively Coupled Plasma: A Modeling Investigation

Formation of a Nanoscale SiO ₂ Capping Layer on Photoresist Lines with an Ar/SiCl ₄ /O ₂ Inductively Coupled Plasma: A Modeling Investigation

Tinck, Stefan; Altamirano-Sánchez, Efrain; De Schepper, Peter; Bogaerts, Annemie

期刊名称Plasma Processes and Polymers
作者Tinck, Stefan; Altamirano-Sánchez, Efrain; De Schepper, Peter; Bogaerts, Annemie
卷第11卷
期第1期
印刷ISSN1612-8850
文件大小760.35KB
发表时间2014-01
DOI10.1002/ppap.201300062
页码52-62

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