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Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

Yokoyama, Masafumi; Nishi, Koichi; Kim, Sanghyeon; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi
  • 期刊名称Applied Physics Letters
  • 作者Yokoyama, Masafumi; Nishi, Koichi; Kim, Sanghyeon; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi
  • 卷第104卷
  • 期第9期
  • 印刷ISSN0003-6951
  • 电子ISSN1077-3118
  • 文件大小1108.17KB
  • 发表时间2014-03-03
  • DOI10.1063/1.4867262
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