![Relaxation processes following excitation and ionization of SiF4 in the vicinity of the silicon 2p threshold. II. Dissociation of the molecular ions]()
Relaxation processes following excitation and ionization of SiF4 in the vicinity of the silicon 2p threshold. II. Dissociation of the molecular ionsLablanquie, P.; Souza, A. C. A.; de Souza, G. G. B.; Morin, P.; Nenner, I. · The Journal of Chemical Physics · 1989