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[IEEE 2014 22nd Iranian Conference on Electrical Engineering (ICEE) - Tehran, Iran (2014.5.20-2014.5.22)] 2014 22nd Iranian Conference on Electrical Engineering (ICEE) - A new low-leakage T-Gate based 8T SRAM cell with improved write-ability in 90nm CMOS technology

[IEEE 2014 22nd Iranian Conference on Electrical Engineering (ICEE) - Tehran, Iran (2014.5.20-2014.5.22)] 2014 22nd Iranian Conference on Electrical Engineering (ICEE) - A new low-leakage T-Gate based 8T SRAM cell with improved write-ability in 90nm CMOS technology

Pasandi, Ghasem; Qasemi, Ehsan; Fakhraie, Sied Mehdi

作者Pasandi, Ghasem; Qasemi, Ehsan; Fakhraie, Sied Mehdi
文件大小2314.12KB
发表时间2014
DOI10.1109/iraniancee.2014.6999569
页码382-386

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