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[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Modelling and optimization of GaN capped HEMTs

[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Modelling and optimization of GaN capped HEMTs

Faramehr, S.; Igic, P.; Kalna, K.

作者Faramehr, S.; Igic, P.; Kalna, K.
文件大小243.14KB
发表时间2014
DOI10.1109/asdam.2014.6998668
页码1-4

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