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Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Kot, D.; Kissinger, G.; Schubert, M. A.; Sattler, A.
  • 期刊名称ECS Journal of Solid State Science and Technology
  • 作者Kot, D.; Kissinger, G.; Schubert, M. A.; Sattler, A.
  • 卷第3卷
  • 期第11期
  • 印刷ISSN2162-8769
  • 电子ISSN2162-8777
  • 文件大小1095.73KB
  • 发表时间2014-09-12
  • DOI10.1149/2.0141411jss
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