Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors
- 期刊名称Applied Physics Letters
- 作者Verma, Ram Mohan; Rao, Ashwath; Singh, B. R.
- 卷第104卷
- 期第9期
- 印刷ISSN0003-6951
- 电子ISSN1077-3118
- 文件大小1603.15KB
- 发表时间2014-03-03
- DOI10.1063/1.4866655
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