[IEEE 2014 Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2014.6.8-2014.6.9)] 2014 Silicon Nanoelectronics Workshop (SNW) - Kinetic model for scavenging of SiO2 interface layer in HfO2 gate stacks
- 作者Li, Xiuyan; Yajima, Takeaki; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira
- 文件大小428.60KB
- 发表时间2014
- DOI10.1109/SNW.2014.7348532
- 页码1-2
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