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A 256-kb 9T Near-Threshold SRAM With 1k Cells per Bitline and Enhanced Write and Read Operations

A 256-kb 9T Near-Threshold SRAM With 1k Cells per Bitline and Enhanced Write and Read Operations

Pasandi, Ghasem; Fakhraie, Sied Mehdi
  • 期刊名称IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • 作者Pasandi, Ghasem; Fakhraie, Sied Mehdi
  • 印刷ISSN1063-8210
  • 电子ISSN1557-9999
  • 文件大小2510.87KB
  • 发表时间2015
  • DOI10.1109/tvlsi.2014.2377518
  • 页码1-1
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