Control of InGaAs and InAs facets using metal modulation epitaxy

Wistey, Mark A.; Baraskar, Ashish K.; Singisetti, Uttam; Burek, Greg J.; Shin, Byungha; Kim, Eunji; McIntyre, Paul C.; Gossard, Arthur C.; Rodwell, Mark J. W.

期刊名称Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
作者Wistey, Mark A.; Baraskar, Ashish K.; Singisetti, Uttam; Burek, Greg J.; Shin, Byungha; Kim, Eunji; McIntyre, Paul C.; Gossard, Arthur C.; Rodwell, Mark J. W.
卷第33卷
期第1期
印刷ISSN2166-2746
电子ISSN2166-2754
文件大小1296.37KB
发表时间2015-01
DOI10.1116/1.4905497

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Control of InGaAs and InAs facets using metal modulation epitaxy