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Multiscale approach to the electronic structure of doped semiconductor surfaces

Multiscale approach to the electronic structure of doped semiconductor surfaces

Sinai, Ofer; Hofmann, Oliver T.; Rinke, Patrick; Scheffler, Matthias; Heimel, Georg; Kronik, Leeor
  • 期刊名称Physical Review B
  • 作者Sinai, Ofer; Hofmann, Oliver T.; Rinke, Patrick; Scheffler, Matthias; Heimel, Georg; Kronik, Leeor
  • 卷第91卷
  • 期第7期
  • 印刷ISSN1098-0121
  • 电子ISSN1550-235X
  • 文件大小1108.15KB
  • 发表时间2015-2-24
  • DOI10.1103/physrevb.91.075311
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