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Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation=

$f_{T}/f_{mathrm {max}}$ of 454/444 GHz" onerror="this.onerror=null;window.coverFallback&&coverFallback(this);">

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{mathrm {max}}$ of 454/444 GHz

Tang, Yan; Shinohara, Keisuke; Regan, Dean; Corrion, Andrea; Brown, David; Wong, Joel; Schmitz, Adele; Fung, Helen; Kim, Samuel; Micovic, Miroslav

期刊名称IEEE Electron Device Letters
作者Tang, Yan; Shinohara, Keisuke; Regan, Dean; Corrion, Andrea; Brown, David; Wong, Joel; Schmitz, Adele; Fung, Helen; Kim, Samuel; Micovic, Miroslav
卷第36卷
期第6期
印刷ISSN0741-3106
电子ISSN1558-0563
文件大小1324.86KB
发表时间2015-6
DOI10.1109/LED.2015.2421311
页码549-551

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