Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures
Ghosh, J.; Osintsev, D.; Sverdlov, V.; Selberherr, S.
- 期刊名称Microelectronic Engineering
- 作者Ghosh, J.; Osintsev, D.; Sverdlov, V.; Selberherr, S.
- 卷第147卷
- 印刷ISSN0167-9317
- 文件大小701.88KB
- 发表时间2015-11
- DOI10.1016/j.mee.2015.04.072
- 页码89-91