[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Characterization and reliability of III-V gate-all-around MOSFETs
- 作者Si, Mengwei; Shin, SangHoon; Conrad, Nathan J.; Gu, Jiangjiang; Zhang, Jingyun; Alam, Muhammad A.; Ye, Peide D.
- 文件大小853.11KB
- 发表时间2015
- DOI10.1109/irps.2015.7112723
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