Hopping transport in the space-charge region ofp-nstructures with InGaN/GaN QWs as a source of excess 1/fnoise and efficiency droop in LEDs

Bochkareva, N. I.; Ivanov, A. M.; Klochkov, A. V.; Kogotkov, V. S.; Rebane, Yu. T.; Virko, M. V.; Shreter, Y. G.

期刊名称Semiconductors
作者Bochkareva, N. I.; Ivanov, A. M.; Klochkov, A. V.; Kogotkov, V. S.; Rebane, Yu. T.; Virko, M. V.; Shreter, Y. G.
卷第49卷
期第6期
印刷ISSN1063-7826
电子ISSN1090-6479
文件大小460.59KB
发表时间2015-6
DOI10.1134/s1063782615060056
页码827-835

发现好书期刊，享受阅读乐趣